In-line monitoring of strain distribution using high resolution X-ray Reciprocal space mapping into 20 nm SiGe pMOS-Reference-Cited by-同舟云学术

In-line monitoring of strain distribution using high resolution X-ray Reciprocal space mapping into 20 nm SiGe pMOS

Published:2017-11 Issue: Volume:70 Page:99-104
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Durand Aurèle,Kaufling Melissa,Le-Cunff Delphine,Rouchon Denis,Gergaud Patrice

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference19 articles.

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3. Strain mapping for the semiconductor industry by dark-field electron holography and nanobeam electron diffraction with nm resolution;Cooper;Semicond. Sci. Technol.,2010

4. Strain measured in a silicon-on-insulator, complementary metal-oxide-semiconductor device channel induced by embedded silicon-carbon source/drain regions,;Murray;Appl. Phys. Lett.,2009

5. Observation of semiconductor device channel strain using in-line high resolution X-ray diffraction;Holt;J. Appl. Phys.,2013

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