Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1-ySny and Ge1-xSix cases-Reference-Cited by-同舟云学术

Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1-ySny and Ge1-xSix cases

Published:2017-09-28 Issue:12 Volume:122 Page:125702
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Xu Chi¹^ORCID,Senaratne Charutha L.²,Culbertson Robert J.¹,Kouvetakis John²,Menéndez José¹^ORCID

Affiliation:

1. Department of Physics, Arizona State University, Tempe, Arizona 85287-1504, USA

2. School of Molecular Sciences, Arizona State University, Tempe, Arizona 85287-1604, USA

Funder

National Science Foundation (NSF)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.4996306

Reference64 articles.

1. Die Konstitution der Mischkristalle und die Raumf�llung der Atome

2. Some Properties of Germanium-Silicon Alloys

3. Phonon Spectra of Ge-Si Alloys

4. Lattice Parameter and Density in Germanium-Silicon Alloys1

5. Applications of X-Ray Characterization for Advanced Materials in the Electronics Industry

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