Fast model for mask spectrum simulation and analysis of mask shadowing effects in extreme ultraviolet lithography-Reference-Cited by-同舟云学术

Fast model for mask spectrum simulation and analysis of mask shadowing effects in extreme ultraviolet lithography

Published:2014-08-08 Issue:3 Volume:13 Page:033007
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Liu Xiaolei¹,Wang Xiangzhao¹,Li Sikun¹,Yan Guanyong¹,Erdmann Andreas²

Affiliation:

1. Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics (SIOM), Laboratory of Information Optics and Opto-electronic Technology, Shanghai 201800, China

2. Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Schottky street 10, Erlangen 91058, Germany

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. ASML's NXE platform performance and volume introduction

2. EUV simulation extension study for mask shadowing effect and its correction

3. Mask pattern correction to compensate for the effect of off-axis incidence in EUV lithography

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