Investigation into Photolithography Process of FPCB with 18 µm Line Pitch

Author:

Sun Ke1,Wu Gai12ORCID,Liang Kang12,Sun Bin3,Wang Jian3

Affiliation:

1. The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China

2. School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China

3. Jiangsu Leader-Tech Semiconductor Co., Ltd., Pizhou 221300, China

Abstract

Due to the widespread application of flexible printed circuit boards (FPCBs), attention is increasing being paid to photolithography simulation with the continuous development of ultraviolet (UV) photolithography manufacturing. This study investigates the exposure process of an FPCB with an 18 µm line pitch. Using the finite difference time domain method, the light intensity distribution was calculated to predict the profiles of the developed photoresist. Moreover, the parameters of incident light intensity, air gap, and types of media that significantly influence the profile quality were studied. Using the process parameters obtained by photolithography simulation, FPCB samples with an 18 µm line pitch were successfully prepared. The results show that a higher incident light intensity and a smaller air gap result in a larger photoresisst profile. Better profile quality was obtained when water was used as the medium. The reliability of the simulation model was validated by comparing the profiles of the developed photoresist via four experimental samples.

Funder

Hubei Provincial Natural Science Foundation of China

Publisher

MDPI AG

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering

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