Effect of measurement error budgets and hybrid metrology on qualification metrology sampling-Reference-Cited by-同舟云学术

Effect of measurement error budgets and hybrid metrology on qualification metrology sampling

Published:2014-12-19 Issue:4 Volume:13 Page:041414
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Sendelbach Matthew¹,Sarig Niv²,Wakamoto Koichi³,Kim Hyang Kyun (Helen)⁴,Isbester Paul¹,Asano Masafumi⁵,Matsuki Kazuto⁵,Osorio Carmen⁶,Archie Chas⁷

Affiliation:

1. Nova Measuring Instruments, Inc., 2055 Gateway Place, Suite 470, San Jose, California 95110, United States

2. Nova Measuring Instruments, Ltd., P.O. Box 266, Weizmann Science Park, Rehovot 76100, Israel

3. Nova Measuring Instruments K.K., 1-7-11-403 Higashigotanda, Shinagawa, Tokyo 141-00222, Japan

4. Nova Measuring Instruments, 93-2 Bansong-dong, Hwaseong-si, Kyeonggi-do 445-160, Republic of Korea

5. Toshiba Corporation, 1, Komukai Toshiba-Cho, Saiwai-Ku, Kawasaki 212-8583, Japan

6. GLOBALFOUNDRIES, 400 Stonebreak Road Extension, Malta, New York 12020, United States

7. Nova Measuring Instruments, Inc., 2055 Gateway Place, Suite 470, San Jose, California 95110, United StatesbNova Measuring Instruments, Ltd., P.O. Box 266, Weizmann Science Park, Rehovot 76100, IsraelcNova Measuring Instruments K.K., 1-7-11-403 Higashigota

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Scatterometry measurement precision and accuracy below 70 nm

2. Integrated scatterometry in high-volume manufacturing for polysilicon gate etch control

3. Impact of shrinking measurement error budgets on qualification metrology sampling and cost

4. Feedforward of mask open measurements on an integrated scatterometer to improve gate linewidth control

5. Correlating scatterometry to CD-SEM and electrical gate measurements at the 90-nm node using TMU analysis

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