Transmission electron microscope calibration methods for critical dimension standards-Reference-Cited by-同舟云学术

Transmission electron microscope calibration methods for critical dimension standards

Published:2016-10-13 Issue:4 Volume:15 Page:044002
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Orji Ndubuisi G.¹,Dixson Ronald G.¹,Garcia-Gutierrez Domingo I.²,Bunday Benjamin D.³,Bishop Michael⁴,Cresswell Michael W.¹,Allen Richard A.¹,Allgair John A.⁵

Affiliation:

1. National Institute of Standards and Technology, 100 Bureau Drive, Gaithersburg, Maryland 20899-8212, United States

2. Universidad Autónoma de Nuevo León, UANL, Facultad de Ingeniería Mecánica y Eléctrica, FIME, Avenida Universidad S/N, Ciudad Universitaria, San Nicolás de los Garza, Nuevo León, C.P. 66450, México

3. SUNY Poly SEMATECH, 257 Fuller Road, Suite 2200 Albany, New York 12203, United States

4. Independent Consultant, 608 Oak Hollow Drive, Kerrville, Texas 78028, United States

5. AWG, 2028 East Ben White Boulevard, #240-2308 Austin, Texas 78741, United States

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. IBM research alliance produces industry’s first 7nm node test chip,2016

2. High-resolution transmission electron microscopy calibration of critical dimension (CD) reference materials

3. Process optimization for lattice-selective wet etching of crystalline silicon structures

4. Traceable calibration of a critical dimension atomic force microscope

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