Towards new plasma technologies for 22nm gate etch processes and beyond

Author:

Joubert O.,Darnon M.,Cunge G.,Pargon E.,Thibault D.,Petit-Etienne C.,Vallier L.,Posseme N.,Bodart P.,Azarnouche L.,Blanc R.,Haas M.,Brihoum M.,Banna S.,Lill T.

Publisher

SPIE

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Highly selective Si3N4 etching on Si using pulsed-microwave CH3F/O2/Ar plasma;Japanese Journal of Applied Physics;2023-07-21

2. DNA Origami for Silicon Patterning;ACS Applied Materials & Interfaces;2020-07-17

3. Role of neutral transport in aspect ratio dependent plasma etching of three-dimensional features;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2017-09

4. Initial evaluation and comparison of plasma damage to atomic layer carbon materials using conventional and low Te plasma sources;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2016-01

5. Challenges of Tailoring Surface Chemistry and Plasma/Surface Interactions to Advance Atomic Layer Etching;ECS Journal of Solid State Science and Technology;2015

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