Evaluations of negative tone development resist and process for EUV lithography-Reference-Cited by-同舟云学术

Evaluations of negative tone development resist and process for EUV lithography

Published:2014-04-17 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Takahashi Toshiya¹,Fujitani Noriaki¹,Itani Toshiro¹

Affiliation:

1. EUVL Infrastructure Development Ctr., Inc. (Japan)

Publisher

SPIE

Reference16 articles.

1. Healing LER using directed self assembly: treatment of EUVL resists with aqueous solutions of block copolymers

2. Maruyama, K., Hishiro, Y., Imoto, R., Shimizu, M., and Kimura, T., “Novel EUV resist materials and process for 16 nm half pitch and beyond,” presented at 2012 International Symposium on Extreme Ultraviolet Lithography in Brussels, Session 2 (2012).

3. Younkin, T. R., Winroth, G., and Gronheid, R., “A comparison of positive- and negative-tone contact hole process flows using the IMEC NXE:3100,” presented at 2012 International Symposium on Extreme Ultraviolet Lithography in Brussels, Session 10 (2012).

4. Rectification of EUV-patterned contact holes using directed self-assembly

5. Process development of the EUVL negative-tone imaging at EIDEC

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2. Ready for multi-beam exposure at 5kV on MAPPER tool: lithographic and process integration performances of advanced resists/stack;Alternative Lithographic Technologies VII;2015-03-19

3. Negative-tone imaging with EUV exposure for 14nm hp and beyond;SPIE Proceedings;2015-03-13

4. Negative-tone Imaging with EUV Exposure;Journal of Photopolymer Science and Technology;2015