Impact of EUV patterning scenario on different design styles and their ground rules for 7nm/5nm node BEOL layers-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Impact of EUV patterning scenario on different design styles and their ground rules for 7nm/5nm node BEOL layers

Published:2016-03-16 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Chiou Tsann-Bim,Chen Alek C.,Dusa Mircea,Tseng Shih-En

Publisher

SPIE

Reference14 articles.

1. Performance overview and outlook of EUV lithography systems;Pirati,2015

2. EUV lithography industrialization progress;Peeters,2014

3. EUV lithography: NXE platform performance overview;Peeters,2014

4. Novel EUV resist development for sub-14nm half pitch;Hori,9422

5. Novel EUV resist materials for 16nm half pitch and EUV resist defects;Shiratani,2014

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. NaviSim;Proceedings of the International Conference on Parallel Architectures and Compilation Techniques;2022-10-08

2. ASAP5: A predictive PDK for the 5 nm node;Microelectronics Journal;2022-08

3. Double patterning at NA 0.33 versus high-NA single exposure in EUV lithography: an imaging comparison;Extreme Ultraviolet (EUV) Lithography IX;2018-03-19

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP