Double patterning at NA 0.33 versus high-NA single exposure in EUV lithography: an imaging comparison-Reference-Cited by-同舟云学术

Double patterning at NA 0.33 versus high-NA single exposure in EUV lithography: an imaging comparison

Published:2018-03-19 Issue: Volume: Page:
ISSN:
Container-title:Extreme Ultraviolet (EUV) Lithography IX
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Author:

Gao Weimin,Wiaux Vincent,Hoppe Wolfgang,Melvin Lawrence S.,Philipsen Vicky,Hendrickx Eric,Lucas Kevin,Kim Ryoung-han

Publisher

SPIE

Reference20 articles.

1. Waikin Li, Ming Mao, Stefan Decoster, Sandip Halder, Gayle Murdoch, Monique Ercken, imec’s iN5 BEOL patterning development, International Conference on Extreme Ultraviolet Lithography, Monterey, California, USA, 2017

2. Mask effects for high-NA EUV: impact of NA, chief-ray-angle, and reduction ratio

3. Anamorphic high-NA EUV lithography optics;Migura,2015

4. Anamorphic imaging at high-NA EUV: mask error factor and interaction between demagnification and lithographic metrics;Bottiglieri,2016

5. High-NA EUV lithography enabling Moore’s law in the next decade;van Schoot,2017

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3. Computational lithographic study of 0.55 NA EUV single patterning for metal layers for the 2nm logic node and beyond;DTCO and Computational Patterning;2022-05-26

4. Plasma-based area selective deposition for extreme ultraviolet resist defectivity reduction and process window improvement;Journal of Vacuum Science & Technology B;2022-05

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