Modeling high-efficiency extreme ultraviolet etched multilayer phase-shift masks

Author:

Sherwin Stuart1,Neureuther Andrew1,Naulleau Patrick2

Affiliation:

1. University of California Berkeley, Department of Electrical Engineering and Computer Science, Berkel

2. Lawrence Berkeley National Laboratory, Center for X-Ray Optics, Berkeley, California

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Ultra-fast aerial image simulation algorithm using wavelength scaling and fast Fourier transformation to speed up calculation by more than three orders of magnitude;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-06-14

2. Attenuated phase shift masks: a wild card resolution enhancement for extreme ultraviolet lithography?;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-05-11

3. Perspectives and tradeoffs of absorber materials for high NA EUV lithography;Journal of Micro/Nanolithography, MEMS, and MOEMS;2020-10-01

4. 3D mask effects in high NA EUV imaging;Extreme Ultraviolet (EUV) Lithography X;2019-03-26

5. High NA EUV lithography: Next step in EUV imaging;Extreme Ultraviolet (EUV) Lithography X;2019-03-26

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