Compensation of overlay errors due to mask bending and non-flatness for EUV masks-Reference-Cited by-同舟云学术

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Compensation of overlay errors due to mask bending and non-flatness for EUV masks

Published:2009-03-13 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Alternative Lithographic Technologies
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Author:

Chandhok Manish,Goyal Sanjay,Carson Steven,Park Seh-Jin,Zhang Guojing,Myers Alan M.,Leeson Michael L.,Kamna Marilyn,Martinez Fabian C.,Stivers Alan R.,Lorusso Gian F.,Hermans Jan,Hendrickx Eric,Govindjee Sanjay,Brandstetter Gerd,Laursen Tod

Publisher

SPIE

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New optical metrology technique for measuring the shape of a lithography photo mask;Metrology, Inspection, and Process Control XXXVIII;2024-04-10

2. Full-field correction for stitched double exposure high-NA EUVL processes;DTCO and Computational Patterning III;2024-04-10

3. Possible extreme ultraviolet mask thermal deformation during exposure;Journal of Micro/Nanopatterning, Materials, and Metrology;2021-08-31

4. The potential of EUV lithography;35th European Mask and Lithography Conference (EMLC 2019);2019-08-29

5. Modeling of thermomechanical changes of extreme-ultraviolet mask and their dependence on absorber variation;Japanese Journal of Applied Physics;2018-05-22

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