Lithographic benefits and mask manufacturability study of curvilinear masks-Reference-Cited by-同舟云学术

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Lithographic benefits and mask manufacturability study of curvilinear masks

Published:2018-10-22 Issue: Volume: Page:
ISSN:
Container-title:Photomask Technology 2018
language:
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Author:

Wei Alexander,Guo Wei,Jiang Fan,Rankin Jed,Tritchkov Alexander,Sun Yuyang,Jayaram Srividya,Zhuang Larry,Bork Ingo,Bailey Todd,Word James,Zhang Xima

Publisher

SPIE

Reference3 articles.

1. SRAF requirements, relevance and impact on EUV lithography for next generation beyond 7nm node;Wei Guo;Advanced Lithography,2018

2. Manufacturing challenges for curvilinear masks;Spence;Photomask Technology,2017

3. Fast pixel-based mask optimization for inverse lithography

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Balancing mask manufacturability and image quality with inverse lithography: a study on variable fracture sizes;Optical and EUV Nanolithography XXXVII;2024-04-10

2. B-spline and Bézier curvilinear representations: a comparative discussion;Novel Patterning Technologies 2024;2024-04-09

3. Improvements on pattern fidelity at high curvature region of curvilinear mask with a novel method of MPC;Photomask Technology 2023;2023-11-21

4. Implicit function characterization of the curvilinear mask to realize parametric optical proximity correction with a neighborhood parallel tabu search;Applied Optics;2023-06-12

5. Photonic-integrated circuit fabrication and test approaches;Integrated Photonics for Data Communication Applications;2023

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