EPE fundamentals and impact of EUV: Will traditional design-rule calculations work in the era of EUV? (Conference Presentation)-Reference-Cited by-同舟云学术

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EPE fundamentals and impact of EUV: Will traditional design-rule calculations work in the era of EUV? (Conference Presentation)

Published:2018-03-30 Issue: Volume: Page:
ISSN:
Container-title:Extreme Ultraviolet (EUV) Lithography IX
language:
Short-container-title:

Author:

Gabor Allen H.,Brendler Andrew,Brunner Timothy A.,Chen Xuemei,Culp James,Levinson Harry

Publisher

SPIE

Reference24 articles.

1. Overlay Simulator For Wafer Steppers

2. Overlay and edge placement control strategies for the 7nm node using EUV and ArF lithography;Mulkens,2015

3. EPE improvement thru self-alignment via multi-color material integration;Mohanty,2017

4. Patterning control strategies for minimum edge placement error in logic devices;Mulkens,2017

5. Lithography stochastics: beyond 3σ;Bristol,2017

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Measurement of image fading impact on 20P40 contact hole LCDU;International Conference on Extreme Ultraviolet Lithography 2023;2023-11-28

2. Line edge roughness reduction for EUV self-aligned double patterning by surface modification on spin-on-carbon and tone inversion technique;Journal of Micro/Nanopatterning, Materials, and Metrology;2021-06-17

3. Characterization of Surface Variation of Chemically Amplified Photoresist to Evaluate Extreme Ultraviolet Lithography Stochastics Effects;Journal of Photopolymer Science and Technology;2021-06-11

4. EUV single exposure via patterning at aggressive pitch;Extreme Ultraviolet (EUV) Lithography XII;2021-02-24

5. Edge placement error fundamentals and impact of EUV: will traditional design-rule calculations work in the era of EUV?;Journal of Micro/Nanolithography, MEMS, and MOEMS;2018-09-24

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