High-power LPP-EUV source with long collector mirror lifetime for high volume semiconductor manufacturing-Reference-Cited by-同舟云学术

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High-power LPP-EUV source with long collector mirror lifetime for high volume semiconductor manufacturing

Published:2018-03-19 Issue: Volume: Page:
ISSN:
Container-title:Extreme Ultraviolet (EUV) Lithography IX
language:
Short-container-title:

Author:

Mizoguchi Hakaru,Yamazaki Taku,Saitou Takashi,Nakarai Hiroaki,Abe Tamatsu,Nowak Krzysztof M.,Kawasuji Yasufumi,Tanaka Hiroshi,Watanabe Yukio,Hori Tsukasa,Kodama Takeshi,Shiraishi Yutaka,Yanagida Tatsuya,Soumangne George,Yamada Tsuyoshi

Publisher

SPIE

Reference22 articles.

1. EUV Lithography with the Alpha Demo Tools: status and challenges;Harned,2007

2. Nikon EUVL development progress update;Miura,2008

3. EUV into production with ASML’s NXE platform;Wagner,2010

4. Performance validation of ASML’s NXE:3100;Wagner,2011

5. ASML’s NXE platform performance and volume Introduction;Peeters,2013

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Enhanced extreme ultraviolet conversion efficiency of a 2 μ m laser-driven preformed tin-droplet target using short picosecond pre-pulses;Physics of Plasmas;2023-04-01

2. The spectrum of a 1-μm-wavelength-driven tin microdroplet laser-produced plasma source in the 5.5–265.5 nm wavelength range;AIP Advances;2021-12-01

3. Real-time dose control for electron-beam lithography;Nanotechnology;2020-12-08

4. Cryogenic cleaning of tin-drop contamination on surfaces relevant for extreme ultraviolet light collection;Journal of Vacuum Science & Technology B;2020-11

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