Roughness decomposition: an on-wafer methodology to discriminate mask, metrology, and shot noise contributions

Author:

Lorusso Gian F.,Gijsbert Rispens,Rutigliani Vito,Van Roey Frieda,Frommhold Andreas,Schiffelers Guido

Publisher

SPIE

Reference7 articles.

1. Evaluation of EUV mask impacts on wafer line-width roughness using aerial and SEM image analyses;Xuemei;SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX,2018

2. Influence of Etch Process on Contact Hole Local Critical Dimension Uniformity in Extreme Ultraviolet Lithography;Gian;SPIE 9425, Advances in Patterning Materials and Processes XXXII,2015

3. Design and Analysis of Experiment;Montgomery;John Wiley & Sons, Inc,2009

4. The need for LWR metrology standardization: the imec roughness protocol;Gian Francesco;SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII,2018

5. Stochastic Printing Failures in Extreme Ultraviolet Lithography;Peter;Journal of Micro/Nanolithography, MEMS, and MOEMS,2018

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Reducing systematic LCDU of dense contact hole arrays on wafer via source optimization;Photomask Japan 2023: XXIX Symposium on Photomask and Next-Generation Lithography Mask Technology;2023-09-29

2. Aerial image metrology (AIMS) based mask-model accuracy improvement for computational lithography;Photomask Technology 2022;2022-12-01

3. Elucidating the role of imaging metrics for variability and after etch defectivity;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-05-30

4. Measuring and analyzing contact hole variations in EUV lithography;Extreme Ultraviolet (EUV) Lithography XII;2021-03-09

5. EUVL is being inserted in manufacturing in 2019: What are the mask related challenges remaining?;35th European Mask and Lithography Conference (EMLC 2019);2019-08-29

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