Reducing systematic LCDU of dense contact hole arrays on wafer via source optimization-Reference-Cited by-同舟云学术

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Reducing systematic LCDU of dense contact hole arrays on wafer via source optimization

Published:2023-09-29 Issue: Volume: Page:
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Container-title:Photomask Japan 2023: XXIX Symposium on Photomask and Next-Generation Lithography Mask Technology
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Author:

Franke Joern-Holger,Van Look Lieve,Frommhold Andreas,Colina Alberto,Rispens Gijsbert,Rio David,van Setten Eelco,Maslow Mark

Publisher

SPIE

Reference17 articles.

1. Impact of local variability on defect-aware process windows;Maslow,2019

2. Stochastic effects in EUV lithography: random, local CD variability, and printing failures;De Bisschop;JM3,2017

3. Contrast optimization for 0.33NA EUV lithography;Finders,2016

4. Optimization and stability of CD variability in pitch 40 nm contact holes on NXE:3300;Van Look,2018

5. Extending EUV lithography for DRAM applications;Rispens,2020

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New approach of local critical dimension uniformity improvement for via/contact hole etch with direct current superposition;Journal of Vacuum Science & Technology B;2024-04-19

2. Exploring the limits of high contrast contact imaging using split pupil exposures in high-NA EUV lithography;Optical and EUV Nanolithography XXXVII;2024-04-10

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