Determination of carrier diffusion length in p- and n-type GaN-Reference-Cited by-同舟云学术

Determination of carrier diffusion length in p- and n-type GaN

Published:2014-03-08 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Hafiz Shopan,Metzner Sebastian,Zhang Fan,Monavarian Morteza,Avrutin Vitaliy,Morkoç Hadis,Karbaum Christopher,Bertram Frank,Christen Jürgen,Gil Bernard,Özgür Ümit

Publisher

SPIE

Reference12 articles.

1. Electron beam induced current measurements of minority carrier diffusion length in gallium nitride

2. Minority carrier diffusion length and lifetime in GaN

3. Electron diffusion length and lifetime in p-type GaN

4. Investigation of the accuracy of the spectral photocurrent method for the determination of minority carrier diffusion length

5. physica status solidi (c)

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