Electron diffusion length and lifetime in p-type GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.122743
Reference10 articles.
1. Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
2. GaN based transistors for high temperature applications
3. Design And Fabrication Of Nitride Based High Power Devices
4. Nitride based high power devices: design and fabrication issues
5. A bilayer Ti/Ag ohmic contact for highly doped n‐type GaN films
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