Extraction of device parameters from capacitance-voltage characteristics of p-GaN/AlGaN/GaN HEMT-Reference-Cited by-同舟云学术

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Extraction of device parameters from capacitance-voltage characteristics of p-GaN/AlGaN/GaN HEMT

Published:2024-01 Issue: Volume:143 Page:106047
ISSN:0026-2692
Container-title:Microelectronics Journal
language:en
Short-container-title:Microelectronics Journal

Author:

Ahmed Nadim^ORCID,Dutta Gourab

Funder

IIT Kharagpur SRIC

Department of Science and Technology, Ministry of Science and Technology, India

Science and Engineering Research Board

Indian Institute of Technology Kharagpur

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference31 articles.

1. An overview of normally-off GaN-based high electron mobility transistors;Roccaforte;Materials,2019

2. The 2018 GaN power electronics roadmap;Amano;J. Phys. D Appl. Phys.,2018

3. Review of technology for normally-off HEMTs with p-GaN gate;Greco;Mater. Sci. Semicond. Process.,2017

4. On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices;Efthymiou;Appl. Phys. Lett.,2017

5. Analysis of the gate capacitance–voltage characteristics in p-GaN/AlGaN/GaN heterostructures;Wu;IEEE Electron. Device Lett.,2017

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Study on the Dynamic Switching Characteristics of p-GaN HEMT Power Devices;Micromachines;2024-07-31

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