Nanoscale cathodoluminescene imaging of III-nitride-based LEDs with semipolar quantum wells in a scanning transmission electron microscope
Author:
Affiliation:
1. Institute of Experimental Physics; Otto-von-Guericke-University Magdeburg; 39106 Magdeburg Germany
2. Institute of Optoelectronics; Ulm University; 89081 Ulm Germany
Funder
German Research Foundation
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201552474/fullpdf
Reference27 articles.
1. Future of group-III nitride semiconductor green laser diodes [Invited]
2. LEDs for lighting - The physical and materials basis
3. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
4. Spontaneous polarization and piezoelectric constants of III-V nitrides
5. Quantum-Confined Stark Effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure
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1. Impact of nanoscale fluctuations and cap-layer thickness in buried InGaN single quantum wells probed by tip-enhanced Raman scattering;Journal of Applied Physics;2023-03-01
2. Photon bunching reveals single-electron cathodoluminescence excitation efficiency in InGaN quantum wells;Physical Review B;2017-07-24
3. Cathodoluminescence in the scanning transmission electron microscope;Ultramicroscopy;2017-05
4. Publisher's Note;Ultramicroscopy;2017-03
5. Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold;Journal of Applied Physics;2016-10-28
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