Reducing EUV mask 3D effects by alternative metal absorbers

Author:

Philipsen Vicky1,Luong Kim Vu1,Souriau Laurent1,Hendrickx Eric1,Erdmann Andreas2,Xu Dongbo2,Evanschitzky Peter2,van de Kruijs Robbert W. E.3,Edrisi Arash3,Scholze Frank4,Laubis Christian4,Irmscher Mathias5,Naasz Sandra5,Reuter Christian5

Affiliation:

1. IMEC (Belgium)

2. Fraunhofer IISB (Germany)

3. Univ. Twente (Netherlands)

4. PTB (Germany)

5. IMS CHIPS (Germany)

Publisher

SPIE

Reference27 articles.

1. Single exposure EUV patterning of BEOL metal layers on the imec iN7 platform;Blanco Carballo,2017

2. SAQP & EUV block patterning of BEOL metal layers on imec’s iN7 platform;Bekaert,2017

3. Imaging impact of multilayer tuning in EUV masks, experimental validation;Philipsen,2014

4. Alternative EUV mask technology to compensate for mask 3D effects;Van Look,2015

5. Mask 3D effect mitigation by source optimization and assist feature placement;Van Look,2016

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1. Future of plasma etching for microelectronics: Challenges and opportunities;Journal of Vacuum Science & Technology B;2024-06-07

2. Understanding and measuring EUV mask 3D effects;Optical and EUV Nanolithography XXXVII;2024-04-10

3. Plasma nitridation for atomic layer etching of Ni;Journal of Vacuum Science & Technology A;2024-01-31

4. Imaging validation for LS of dark field low-n vs Ta-based absorber masks;International Conference on Extreme Ultraviolet Lithography 2023;2023-11-21

5. Extreme ultraviolet pellicle wrinkles influence on mask 3D effects: experimental demonstration;Applied Optics;2023-08-11

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