Author:
Lee Dong Gi,Moon Seungchan,Choi Jinhyuk,Wi Seong Ju,Ahn Jinho
Abstract
Extreme ultraviolet (EUV) lithography uses reflective optics and a thick mask absorber, leading to mask 3D (M3D) effects. These M3D effects cause disparities in the amplitudes and phases of EUV mask diffractions, impacting mask imaging performance and reducing process yields. Our findings demonstrate that wrinkles in the EUV pellicle can exacerbate M3D effects. This imbalance results in critical dimension variation, image contrast loss, and pattern shift in mask images. Therefore, the use of a pellicle material with thermodynamic characteristics that minimize wrinkles when exposed to EUV rays is imperative.
Funder
Ministry of Science and ICT, South Korea
Subject
Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering