Influence of post exposure bake time on EUV photoresist RLS trade-off-Reference-Cited by-同舟云学术

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Influence of post exposure bake time on EUV photoresist RLS trade-off

Published:2017-03-24 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
Short-container-title:

Author:

Vesters Yannick¹,De Simone Danilo²,De Gendt Stefan¹

Affiliation:

1. KU Leuven (Belgium)

2. IMEC (Belgium)

Publisher

SPIE

Reference19 articles.

1. Closing Address;Itani,2016

2. Influence of Acid Diffusion on the Lithographic Performance of Chemically Amplified Resists

3. Resist effects at small pitches

4. Effect of Acid Diffusion and Polymer Structure on Line Edge Roughness

5. Understanding Acid Reaction and Diffusion in Chemically Amplified Photoresists: An Approach at the Molecular Level

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Machine Learning Applied to Electron Beam Lithography to Accelerate Process Optimization of a Contact Hole Layer;ACS Applied Materials & Interfaces;2024-04-16

2. A Single-Component Molecular Glass Resist Based on Tetraphenylsilane Derivatives for Electron Beam Lithography;ACS Omega;2023-03-21

3. Critical dimension prediction of metal oxide nanoparticle photoresists for electron beam lithography using a recurrent neural network;Nanoscale;2023

4. Promising Lithography Techniques for Next-Generation Logic Devices;Nanomanufacturing and Metrology;2018-04-23

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