Affiliation:
1. Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing, 100084, China
Abstract
A photoresist critical dimension (CD) recurrent neural network model is established and applied to electron beam lithography experiments. The CD prediction accuracy exceeds 93% and appropriate process conditions can be accurately screened.
Funder
Tsinghua Initiative Scientific Research Program
Beijing Municipal Science and Technology Commission
National Natural Science Foundation of China
Publisher
Royal Society of Chemistry (RSC)
Subject
General Materials Science
Cited by
3 articles.
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