Progress of high-power deep-ultraviolet LEDs
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SPIE
Reference16 articles.
1. III–Nitride UV Devices
2. Advances in group III-nitride-based deep UV light-emitting diode technology
3. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
4. Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
5. 270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power
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3. Fabrication of High Power Deep Ultraviolet Light-Emitting Diodes with Glass Lenses Using Atomic Diffusion Bonding;ECS Journal of Solid State Science and Technology;2019-10-09
4. Progress in External Quantum Efficiency for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes;physica status solidi (a);2019-01-15
5. High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer;Applied Physics Express;2017-11-30
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