Progress of high-power deep-ultraviolet LEDs
Author:
Publisher
SPIE
Reference16 articles.
1. III–Nitride UV Devices
2. Advances in group III-nitride-based deep UV light-emitting diode technology
3. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%
4. Improvement of Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
5. 270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power
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1. AlGaN‐based ultraviolet light‐emitting diodes: challenges and opportunities;Luminescence;2020-11-15
2. Fabrication of High Power Deep Ultraviolet Light-Emitting Diodes with Glass Lenses Using Atomic Diffusion Bonding;ECS Journal of Solid State Science and Technology;2019-10-09
3. Progress in External Quantum Efficiency for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes;physica status solidi (a);2019-01-15
4. High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer;Applied Physics Express;2017-11-30
5. Scanning near-field optical microscopy of AlGaN epitaxial layers;SPIE Proceedings;2016-09-15
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