High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer-Reference-Cited by-同舟云学术

High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer

Published:2017-11-30 Issue:1 Volume:11 Page:012101
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Kashima Yukio,Maeda Noritoshi,Matsuura Eriko,Jo Masafumi,Iwai Takeshi,Morita Toshiro,Kokubo Mitsunori,Tashiro Takaharu,Kamimura Ryuichiro,Osada Yamato,Takagi Hideki,Hirayama Hideki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/11/i=1/a=012101/pdf

Reference20 articles.

1. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes

2. A Brief Review of III-Nitride UV Emitter Technologies and Their Applications

3. High-output-power 255/280/310 nm deep ultraviolet light-emitting diodes and their lifetime characteristics

4. Progress of high-power deep-ultraviolet LEDs

5. White light emitting diodes with super-high luminous efficacy

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