High-NA EUV lithography enabling Moore’s law in the next decade-Reference-Cited by-同舟云学术

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High-NA EUV lithography enabling Moore’s law in the next decade

Published:2017-10-16 Issue: Volume: Page:
ISSN:
Container-title:International Conference on Extreme Ultraviolet Lithography 2017
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Author:

van Schoot Jan,Troost Kars,Bornebroek Frank,van Ballegoij Rob,Lok Sjoerd,Krabbendam Peter,Stoeldraijer Judon,Loopstra Erik,Benschop Jos P.,Finders Jo,Meiling Hans,van Setten Eelco,Kneer Bernhard,Kaiser Winfried,Heil Tilmann,Migura Sascha,Kuerz Peter,Neumann Jens Timo

Publisher

SPIE

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thermal deformation variations with field positions on the wafer and resist types (CAR and MOR);International Conference on Extreme Ultraviolet Lithography 2023;2023-11-21

2. Ultrasensitive metal-organic cluster resist for patterning of single exposure high numerical aperture extreme ultraviolet lithography applications;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-12-27

3. Design of an extreme ultraviolet lithography projection objective with a grouping design method through forward and reverse real ray tracing;Applied Optics;2022-08-25

4. ASAP5: A predictive PDK for the 5 nm node;Microelectronics Journal;2022-08

5. Process Window, and Process Optimization in Both Low and High Na EUV Processes for Advanced Logic Technologies Nodes;2022 China Semiconductor Technology International Conference (CSTIC);2022-06-20

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