EUV pupil optimization for 32nm pitch logic structures-Reference-Cited by-同舟云学术

EUV pupil optimization for 32nm pitch logic structures

Published:2018-10-03 Issue: Volume: Page:
ISSN:
Container-title:International Conference on Extreme Ultraviolet Lithography 2018
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Author:

Rio David,Blanco Carballo Victor M.,Franke Joern-Holger,Dusa Mircea V.,De Poortere Etienne,Biesemans Serge,Nafus Kathleen,Gillijns Werner,Hendrickx Eric,van Adrichem Paul,Lyakhova Kateryna,Spence Chris A.

Publisher

SPIE

Reference16 articles.

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2. EUV for HVM: towards an industrialized scanner for HVM NXE3400B performance update;van Es,2018

3. Single exposure EUV patterning of BEOL metal layers on the IMEC iN7 platform;Blanco Carballo,2017

4. EUV into production with ASML’s NXE platform;Wagner,2010

5. SAQP and EUV block patterning of BEOL metal layers on IMEC’s iN7 platform;Bekaert,2017

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1. Exploration of alternative mask for 0.33NA extreme ultraviolet single patterning at pitch 28-nm metal design;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-04-07

2. Extending 0.33 NA EUVL to 28 nm pitch using alternative mask and controlled aberrations;Extreme Ultraviolet (EUV) Lithography XII;2021-02-22

3. Metal layer single EUV expose at pitch 28: how bright field and NTD resist advantages align;Extreme Ultraviolet (EUV) Lithography XII;2021-02-22

4. Improving exposure latitudes and aligning best focus through pitch by curing M3D phase effects with controlled aberrations;International Conference on Extreme Ultraviolet Lithography 2019;2019-09-26

5. Impact of sequential infiltration synthesis (SIS) on roughness and stochastic nano-failures for EUVL patterning;Extreme Ultraviolet (EUV) Lithography X;2019-03-26