Metal layer single EUV expose at pitch 28: how bright field and NTD resist advantages align-Reference-Cited by-同舟云学术

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Metal layer single EUV expose at pitch 28: how bright field and NTD resist advantages align

Published:2021-02-22 Issue: Volume: Page:
ISSN:
Container-title:Extreme Ultraviolet (EUV) Lithography XII
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Author:

Franke Joern-Holger,Frommhold Andreas,Davydova Natalia,Aubert Remko,Nair Vineet Vijayakrishnan,Kovalevich Tatiana,Rio David,Bekaert Joost,Wang Erik,Rispens Gijsbert,Maslow Mark,Hendrickx Eric

Publisher

SPIE

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. EUV OPC modeling of dry photoresist system for pitch 32nm BEOL;Optical and EUV Nanolithography XXXVII;2024-04-10

2. Mask innovations on the eve of high NA EUV lithography;Japanese Journal of Applied Physics;2024-04-01

3. Mask absorber, mask tone, and wafer process impact on resist line-edge-roughness;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-10-13

4. Evaluation of Lines and Spaces printing and general understanding of imaging with dark field low-n mask;Journal of Micro/Nanopatterning, Materials, and Metrology;2023-04-17

5. Overlay and CD uniformity variation due to wafer thermal deformation caused by EUV exposure;Japanese Journal of Applied Physics;2023-02-20

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