Evaluation of Lines and Spaces printing and general understanding of imaging with dark field low-n mask-Reference-Cited by-同舟云学术

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Evaluation of Lines and Spaces printing and general understanding of imaging with dark field low-n mask

Published:2023-04-17 Issue:02 Volume:22 Page:
ISSN:2708-8340
Container-title:Journal of Micro/Nanopatterning, Materials, and Metrology
language:
Short-container-title:J. Micro/Nanopattern. Mats. Metro.

Author:

Kovalevich Tatiana¹,Van Look Lieve¹,Franke Joern-Holger¹,Philipsen Vicky¹

Affiliation:

1. IMEC, Leuven, Belgium

Publisher

SPIE-Intl Soc Optical Eng

Subject

General Arts and Humanities

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Best focus alignment through pitch strategies for hyper-NA EUV lithography;Optical and EUV Nanolithography XXXVII;2024-04-10

2. Study of MEEF improvement with low-n absorber EUVL mask;Optical and EUV Nanolithography XXXVII;2024-04-10

3. Mask innovations on the eve of high NA EUV lithography;Japanese Journal of Applied Physics;2024-04-01

4. Patterning Infrastructure Development for Advanced EUV Lithography: Continuing Dimensional Scaling Through EUV Lithography to Support Moore’s Law;IEEE Electron Devices Magazine;2024-03

5. Imaging validation for LS of dark field low-n vs Ta-based absorber masks;International Conference on Extreme Ultraviolet Lithography 2023;2023-11-21

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