A comparative study of self-aligned quadruple and sextuple patterning techniques for sub-15nm IC scaling
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SPIE
Cited by 14 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Hybrid Chemo-/Grapho-Epitaxial Alignment Strategy for Defect Reduction in Sub-10 nm Directed Self-Assembly of Silicon-Containing Block Copolymers;Chemistry of Materials;2016-12-12
2. Process development and edge-placement yield modeling of alternating-material self-aligned multiple patterning;Journal of Micro/Nanolithography, MEMS, and MOEMS;2016-09-29
3. Cut-hole layout decomposition and synthesis to reduce the effect of edge-placement errors;Microelectronic Engineering;2016-04
4. A paradigm shift in patterning foundation from frequency multiplication to edge-placement accuracy: a novel processing solution by selective etching and alternating-material self-aligned multiple patterning;SPIE Proceedings;2016-03-22
5. Layout decomposition and synthesis for a modular technology to solve the edge-placement challenges by combining selective etching, direct stitching, and alternating-material self-aligned multiple patterning processes;SPIE Proceedings;2016-03-16
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