Layout decomposition and synthesis for a modular technology to solve the edge-placement challenges by combining selective etching, direct stitching, and alternating-material self-aligned multiple patterning processes-Reference-Cited by-同舟云学术

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Layout decomposition and synthesis for a modular technology to solve the edge-placement challenges by combining selective etching, direct stitching, and alternating-material self-aligned multiple patterning processes

Published:2016-03-16 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
language:
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Author:

Liu Hongyi,Han Ting,Zhou Jun,Chen Yijian

Publisher

SPIE

Reference24 articles.

1. On process-aware 1-D standard cell design;Zhang,2010

2. EUV lithography at insertion and beyond;Borodovsky,2012

3. E-beam to complement optical lithography for 1D layouts;Lam,2011

4. A comparative study of self-aligned quadruple and sextuple patterning techniques for sub-15nm IC scaling;Chen,2013

5. Mask strategy and layout decomposition for self-aligned quadruple patterning;Kang,2013

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mandrel/spacer engineering-based patterning and metallization incorporating metal layer division and rigorously self-aligned vias and cuts (SAVC);Advanced Etch Technology and Process Integration for Nanopatterning XIII;2024-04-09

2. Self-aligned blocking integration demonstration for critical sub-40nm pitch Mx level patterning;SPIE Proceedings;2017-04-07

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