Experimental characterization of model extreme ultraviolet resist materials
Author:
Affiliation:
1. Center for X-Ray Optics, Lawrence Berkeley National Laboratory, Berkeley, California, United States
2. Intel Corporation, Components Research, Hillsboro, Oregon, United States
Publisher
SPIE-Intl Soc Optical Eng
Reference24 articles.
1. Molecular excitation and relaxation of extreme ultraviolet lithography photoresists
2. Lithographic resists;Hinsberg,2012
3. Radiation Chemistry in Chemically Amplified Resists
4. A numeric model for the imaging mechanism of metal oxide EUV resists
5. Extreme ultraviolet photoemission of a tin-based photoresist
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1. Evaluation of Electron Blur for Different Electron Energies;Journal of Photopolymer Science and Technology;2024-06-25
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