A numeric model for the imaging mechanism of metal oxide EUV resists

Author:

Hinsberg W. D.1,Meyers S.2

Affiliation:

1. Columbia Hill Technical Consulting (United States)

2. Inpria Corp. (United States)

Publisher

SPIE

Reference17 articles.

1. Metal oxide EUV photoresist performance for N7 relevant patterns and processes;Stowers,2016

2. Polymer Engineering & Science

3. New high‐resolution charge transfer x‐ray and electron beam negative resist

4. Development of materials and processes for double patterning toward 32-nm node 193-nm immersion lithography process;Tarutani,2008

5. Moreau, Wayne M., Semiconductor Lithography: Principles, Practices, and Materials, Plenum Press, New York, 199 (1988).

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