Fundamentals of resist stochastics effect for single-expose EUV patterning-Reference-Cited by-同舟云学术

Fundamentals of resist stochastics effect for single-expose EUV patterning

Published:2019-03-26 Issue: Volume: Page:
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Container-title:Extreme Ultraviolet (EUV) Lithography X
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Author:

De Silva Anuja,Meli Luciana,Goldfarb Dario L.,Felix Nelson M.

Publisher

SPIE

Reference22 articles.

1. EUV Patterning Successes and Frontiers;Felix,2016

2. Single-expose patterning development for EUV lithography;De Silva;Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII,2017

3. Exploring the readiness of EUV photo materials for patterning advanced technology nodes;De Simone;Proc. SPIE 10143, Extreme Ultraviolet (EUV) Lithography VIII,2017

4. Stochastic effects in EUV lithography: random, local CD variability, and printing failures;De Bisschop;J. Micro/Nanolithogr. MEMS MOEMS,2017

5. Defect detection strategies and process partitioning for single-expose EUV patterning

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