Yield-aware mask assignment using positive semi-definite relaxation in LELECUT triple patterning-Reference-Cited by-同舟云学术

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Yield-aware mask assignment using positive semi-definite relaxation in LELECUT triple patterning

Published:2015-03-26 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Kohira Yukihide,Kodama Chikaaki,Matsui Tomomi,Takahashi Atsushi,Nojima Shigeki,Tanaka Satoshi

Publisher

SPIE

Reference26 articles.

1. Layout decomposition for double patterning lithography;Kahng,2008

2. Double patterning layout decomposition for simultaneous conflict and stitch minimization;Yuan,2009

3. A new graph-theoretic, multi-objective layout decomposition framework for double patterning lithography;Yang,2010

4. Native-conflict-aware wire perturbation for double patterning technology;Chen,2010

5. Optimal layout decomposition for double patterning technology;Tang,2011

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lithography and OPC friendly triple patterning decomposition method for VIA;SPIE Proceedings;2017-03-24

2. A Routing Method Using Directed Grid-Graph for Self-Aligned Quadruple Patterning;IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences;2017

3. Conclusions and Future Works;Design for Manufacturability with Advanced Lithography;2016

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