Innovative scatterometry approach for self-aligned quadruple patterning (SAQP) process control

Author:

Gunay-Demirkol Anil1,Altamirano Sanchez Efrain1,Heraud Stephane2,Godny Stephane1,Charley Anne-Laure1,Leray Philippe1,Urenski Ronen3,Cohen Oded3,Turovets Igor3,Wolfling Shay3

Affiliation:

1. IMEC (Belgium)

2. Nova Measuring Instruments GmbH (Germany)

3. Nova Measuring Instruments LTD (Israel)

Publisher

SPIE

Reference3 articles.

1. Self-aligned-quadruple-patterning for N7/N5 silicon fins;Altamirano-Sánchez,2016

2. Metal1 patterning study for random-logic applications with 193i, using calibrated OPC for litho and etch;Mailfert,2014

3. Hybrid metrology solution for 1X node technology

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1. Cross-evaluation of critical dimension measurement techniques;Journal of Micro/Nanopatterning, Materials, and Metrology;2024-03-08

2. Critical dimension measurement: from synchrotron small angle x-ray scattering to industrial optical scatterometry techniques;Metrology, Inspection, and Process Control XXXVII;2023-04-27

3. Advanced process control loop for SAQP pitch walk with combined lithography, deposition and etch actuators;Metrology, Inspection, and Process Control for Microlithography XXXIV;2020-03-24

4. Directed self-assembly of block copolymers for 7 nanometre FinFET technology and beyond;Nature Electronics;2018-10

5. Cost modeling 22nm pitch patterning approaches;Advanced Etch Technology for Nanopatterning VII;2018-03-20

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