Fabrication of 28nm pitch Si fins with DSA lithography-Reference-Cited by-同舟云学术

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Fabrication of 28nm pitch Si fins with DSA lithography

Published:2013-03-26 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Alternative Lithographic Technologies V
language:
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Author:

Schmid Gerard,Farrell Richard,Xu Ji,Park Chanro,Preil Moshe,Chakrapani Vidhya,Mohanty Nihar,Ko Akiteru,Cicoria Michael,Hetzer David,Somervell Mark,Rathsack Benjamen

Publisher

SPIE

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Etch considerations for directed self-assembly patterning using capacitively coupled plasma;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2018-05

2. Derivation of Multiple Covarying Material and Process Parameters Using Physics-Based Modeling of X-ray Data;Macromolecules;2017-09-28

3. Directed self-assembly compliant flow with immersion lithography: from material to design and patterning;Journal of Micro/Nanolithography, MEMS, and MOEMS;2016-09-29

4. Directed self-assembly graphoepitaxy template generation with immersion lithography;Journal of Micro/Nanolithography, MEMS, and MOEMS;2015-09-11

5. Sensitivity analysis and line edge roughness determination of 28-nm pitch silicon fins using Mueller matrix spectroscopic ellipsometry-based optical critical dimension metrology;Journal of Micro/Nanolithography, MEMS, and MOEMS;2015-08-03

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