Lithography aware overlay metrology target design method-Reference-Cited by-同舟云学术

Lithography aware overlay metrology target design method

Published:2016-03-24 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Lee Myungjun¹,Smith Mark D.¹,Lee Joonseuk²,Jung Mirim²,Lee Honggoo²,Kim Youngsik²,Han Sangjun²,Adel Michael E.³,Lee Kangsan⁴,Lee Dohwa⁴,Choi Dongsub⁴,Liu Zephyr⁴,Itzkovich Tal³,Levinski Vladimir³,Levy Ady¹

Affiliation:

1. KLA-Tencor Corp. (United States)

2. SK Hynix (Korea, Republic of)

3. KLA-Tencor Israel (Israel)

4. KLA-Tencor Korea (Korea, Republic of)

Publisher

SPIE

Reference14 articles.

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2. EUV resolution enhancement techniques (RETs) for f1 0.4 and below,;Hsu,2015

3. Overlay target design and evaluation for SADP process,;Yeh,2012

4. Diffraction based overlay and image based overlay on production flow for advanced technology node,;Blancquaert,2013

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