The NIST EUV facility for advanced photoresist qualification using the witness-sample test
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SPIE
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Development of Tool for Contamination Layer Thickness Measurement Using High Power Extreme Ultraviolet Light and in Situ Ellipsometer;Japanese Journal of Applied Physics;2013-05-01
2. Resist outgassing characterization based on the resist compositions and process;Extreme Ultraviolet (EUV) Lithography IV;2013-04-08
3. Resist Materials and Processes for Extreme Ultraviolet Lithography;Japanese Journal of Applied Physics;2013-01-01
4. Outgassing and photochemical studies of photosensitive films upon irradiation at 13.5 nm;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2012-09
5. Comparison of EUV and e-beam lithographic technologies for sub-22-nm node patterning;SPIE Proceedings;2012-03-29
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