Resist Materials and Processes for Extreme Ultraviolet Lithography
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference137 articles.
1. Insertion strategy for EUV lithography
2. Progress in EUV lithography towards manufacturing from an exposure tool perspective
3. Latest cluster performance for EUV lithography
4. The SEMATECH Berkeley MET: demonstration of 15-nm half-pitch in chemically amplified EUV resist and sensitivity of EUV resists at 6.x-nm
5. A new inorganic EUV resist with high-etch resistance
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1. Shielding effect of underlayer against secondary electrons generated in substrate in extreme ultraviolet lithography;Japanese Journal of Applied Physics;2023-12-27
2. Effects of underlayer absorption coefficient on bridging risk in chemically amplified resist process for extreme ultraviolet lithography;Japanese Journal of Applied Physics;2023-11-01
3. Sensitization of polymethacrylate resist with adding acid-generating promoters upon exposure to EUV light;Japanese Journal of Applied Physics;2023-11-01
4. Reaction mechanisms of Sn-complex-side-chain polymer used for extreme ultraviolet lithography, studied by electron pulse radiolysis and γ-radiolysis;Japanese Journal of Applied Physics;2023-07-01
5. Defect risks at interfaces of chemically amplified resists in extreme ultraviolet lithography process;Japanese Journal of Applied Physics;2023-07-01
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