E-beam based EUV mask characterization for studying mask induced wafer effects-Reference-Cited by-同舟云学术

E-beam based EUV mask characterization for studying mask induced wafer effects

Published:2018-10-18 Issue: Volume: Page:
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Container-title:Photomask Technology 2018
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Author:

Vaenkatesan Vidya,Tian Qing,Gallagher Emily,Wiley Jim,Finders Jo,Kubis Michael,Mulkens Jan,Kuan Chiyan,Gao Kevin

Publisher

SPIE

Reference5 articles.

1. Massive metrology using fast e-beam technology improves OPC model accuracy by >2x at faster turnaround time;Zhao;Metrology, Inspection, and Process Control for Microlithography XXXII,2018

2. Lithographic stochastics: beyond 3σ

3. Holistic approach for overlay and edge placement error to meet the 5nm technology node requirements;Mulkens,2018

4. Fast local registration measurements for efficient e-beam writer qualification and correction

5. Advanced patterning techniques: Etch opportunities and responsibilities;Schenker,2016

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1. Extreme ultraviolet lithography reticle local CD uniformity correlation to wafer local CD uniformity;Photomask Technology 2022;2022-12-01

2. Statistical analysis of the impact of 2D reticle variability on wafer variability in advanced EUV nodes using large-scale Monte Carlo simulations;Extreme Ultraviolet (EUV) Lithography XII;2021-02-26

3. Real-time dose control for electron-beam lithography;Nanotechnology;2020-12-08

4. Evaluation of local CD and placement distribution on EUV mask and its impact on wafer;Photomask Japan 2019: XXVI Symposium on Photomask and Next-Generation Lithography Mask Technology;2019-06-27