"Masking Effect" And "Internal CEL" New Design Concepts For A Positive Working Photoresist
Author:
Affiliation:
1. Mitsubishi Chemical Industries Ltd. (Japan)
2. Mitsubishi Electric Corporation (Japan)
Publisher
SPIE
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Local Peeling of Photoresist Film during Ultraviolet Light Exposure;Japanese Journal of Applied Physics;1994-01-15
2. Adhesion of Photoresist Pattern Baked at 80 to $\bf 325^{\circ} C$ to Inorganic Solid Surface;Japanese Journal of Applied Physics;1994-01-15
3. Adhesion of Photoresist Pattern Baked at 80 to 325°C in Tetramethyl-ammonium-hydroxide Aqueous Solution;Japanese Journal of Applied Physics;1992-11-15
4. Masking effect of photoactive compounds with various ballast molecules in novolak-naphthoquinonediazide positive photoresists;Polymer Engineering and Science;1992-10
5. Design of high-resolution positive-working photoresist;Journal of Photochemistry and Photobiology A: Chemistry;1992-04
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