Adhesion of Photoresist Pattern Baked at 80 to 325°C in Tetramethyl-ammonium-hydroxide Aqueous Solution-Reference-Cited by-同舟云学术

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Adhesion of Photoresist Pattern Baked at 80 to 325°C in Tetramethyl-ammonium-hydroxide Aqueous Solution

Published:1992-11-15 Issue:Part 1, No. 11 Volume:31 Page:3725-3730
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kawai Akira,Nagata Hitoshi,Takata Masasuke

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

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