Calibration of physical resist models: methods, usability, and predictive power-Reference-Cited by-同舟云学术

Calibration of physical resist models: methods, usability, and predictive power

Published:2009-07-01 Issue:3 Volume:8 Page:033005
ISSN:1932-5150
Container-title:Journal of Micro/Nanolithography, MEMS, and MOEMS
language:en
Short-container-title:J. Micro/Nanolith. MEMS MOEMS

Author:

Klostermann Ulrich

Publisher

SPIE-Intl Soc Optical Eng

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. Split, overlap/stitching, and process design for double patterning considering local reflectivity variation by using rigorous 3D wafer-topography/lithography simulation

2. Analysis of topography effects on lithographic performance in double patterning applications

3. EUV pattern shift compensation strategies

4. P. Brooker and L. Zavyalova , “Understanding characteristic EUV image variation in full-field exposure tools,” Solid State Technol. (2008), see http://www.microlithographyworld.com.

5. Impact of mask three-dimensional effects on resist-model calibration

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