Methodology for establishing CD-SEM robust metrology algorithm for development cycles applications
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SPIE
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Model-based contour extraction: an enabler for very low-frame SEM images metrology;Metrology, Inspection, and Process Control XXXVI;2022-05-26
2. Enabling CD SEM metrology for 5nm technology node and beyond;SPIE Proceedings;2017-03-28
3. Methodology for determining critical dimension scanning electron microscope measurement condition of sub-20 nm resist patterns for 0.33 NA extreme ultraviolet lithography;Journal of Micro/Nanolithography, MEMS, and MOEMS;2016-10-12
4. Methodology for determining CD-SEM measurement condition of sub-20nm resist patterns for 0.33NA EUV lithography;SPIE Proceedings;2015-03-19
5. Precise CD-SEM metrology of resist patterns at around 20 nm for 0.33NA EUV lithography;Metrology, Inspection, and Process Control for Microlithography XXVIII;2014-04-02
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