Enabling CD SEM metrology for 5nm technology node and beyond-Reference-Cited by-同舟云学术

Enabling CD SEM metrology for 5nm technology node and beyond

Published:2017-03-28 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Lorusso Gian Francesco¹,Ohashi Takeyoshi²,Yamaguchi Astuko²,Inoue Osamu³,Sutani Takumichi²,Horiguchi Naoto¹,Bömmels Jürgen¹,Wilson Christopher J.¹,Briggs Basoene¹,Tan Chi Lim¹,Raymaekers Tom¹,Delhougne Romain¹,Van den Bosch Geert¹,Di Piazza Luca¹,Kar Gouri Sankar¹,Furnémont Arnaud¹,Fantini Andrea¹,Donadio Gabriele Luca⁴,Souriau Laurent¹,Crotti Davide¹,Yasin Farrukh¹,Appeltans Raf¹,Rao Siddharth¹,De Simone Danilo¹,Rincon Delgadillo Paulina¹,Leray Philippe¹,Charley Anne-Laure¹,Zhou Daisy¹,Veloso Anabela¹,Collaert Nadine¹,Hasumi Kazuhisa³,Koshihara Shunsuke³,Ikota Masami³,Okagawa Yutaka³,Ishimoto Toru⁵

Affiliation:

1. IMEC (Belgium)

2. Hitachi, Ltd. (Japan)

3. Hitachi High-Technologies Corp. (Japan)

4. IMEC (Japan)

5. Hitachi High-Tech Science Corp. (Japan)

Publisher

SPIE

Reference4 articles.

1. SEM based Overlay measurement between Resist and buried patterns;Inoue,2016

2. Leray, P., Halder,S. Lorusso, G. F., Baudemprez, B., Inoue, O., Okagawa, Y., “Hybrid Overlay Metrology for High order correction by using CDSEM” Proc. SPIE. 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 977824.

3. Methodology for establishing CD-SEM robust metrology algorithm for development cycles applications;Hitomi,2012

4. Line Width Roughness Accuracy Analysis during Pattern Transfer in Self-aligned Quadruple Patterning Process;Lorusso,2016

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