SAQP and EUV block patterning of BEOL metal layers on IMEC's iN7 platform-Reference-Cited by-同舟云学术

SAQP and EUV block patterning of BEOL metal layers on IMEC's iN7 platform

Published:2017-03-24 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Bekaert Joost¹,Di Lorenzo Paolo¹,Mao Ming¹,Decoster Stefan¹,Larivière Stéphane¹,Franke Joern-Holger¹,Blanco Carballo Victor M.¹,Kutrzeba Kotowska Bogumila¹,Lazzarino Frederic¹,Gallagher Emily¹,Hendrickx Eric¹,Leray Philippe¹,Kim R. Ryoung-han¹,McIntyre Greg¹,Colsters Paul²,Wittebrood Friso²,van Dijk Joep²,Maslow Mark²,Timoshkov Vadim²,Kiers Ton²

Affiliation:

1. IMEC (Belgium)

2. ASML Netherlands B.V. (Netherlands)

Publisher

SPIE

Reference13 articles.

1. Design and pitch scaling for affordable node transition and EUV insertion scenario;Kim,2017

2. Single exposure EUV patterning of BEOL metal layers on the Imec iN7 platform;Blanco Carballo,2017

3. Reticle enhancement techniques toward N5 metal2;Gillijns,2017

4. Comparing positive and negative tone development process for printing the metal and contact layers of the 32- and 22-nm nodes

5. EUV mask infrastructure readiness and gaps for TD and HVM;Liang,2017

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