Demonstration of uniform and reliable GaN p-i-p-i-n separate-absorption and multiplication ultraviolet avalanche photodiode arrays with large detection area-Reference-Cited by-同舟云学术

Demonstration of uniform and reliable GaN p-i-p-i-n separate-absorption and multiplication ultraviolet avalanche photodiode arrays with large detection area

Published:2019-03-01 Issue: Volume: Page:
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Container-title:Gallium Nitride Materials and Devices XIV
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Author:

Ji Mi-Hee,Jeong Hoon,Bakhtiary-Noodeh Marzieh,Shen Shyh-Chiang,Detchprohm Theeradetch,Sood Ashok,Ghuman Parminder,Babu Sachidananda,Dhar Nibir K.,Lewis Jay,Dupuis Russell D.

Publisher

SPIE

Reference10 articles.

1. Uniform and Reliable GaN p-i-n Ultraviolet Avalanche Photodiode Arrays

2. AlxGa1−xN Ultraviolet Avalanche Photodiodes With Avalanche Gain Greater Than $10^{5}$

3. Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes

4. Stable multiplication gain in GaN p–i–n avalanche photodiodes with large device area

5. Demonstration of 4H-SiC avalanche photodiodes linear array

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